145 J.P. Conde, K.K. Chan, J.M. Blum, M.Arienzo, P.A. Monteiro, J.A. Ferreira, V. Chu, N. Wyrsch,
"Annealing Kinetics of a-Si:H Deposited by Concentric-Electrode RF Glow Discharge at Room Temperature",
J. Appl. Phys., February 1993, Vol. 73(4), pp.1826-1831;

146 E. Sauvain, A. Mettler, N. Wyrsch, A. Shah,
"Subgap Absorption Spectra of Slightly Doped a-Si:H Measured with Constant Photocurrent Method (CPM) and Photothermal Deflection Spectroscopy (PDS)",
Solid state comm. 1993, Vol. 85 (3), pp. 219-222;

147 N. Beck, N. Wyrsch, E. Sauvain, A. Shah,
"The mt Problem: New Results on Micro-Doped a-Si:H Films",
Proceedings of the MRS Symp., San Francisco, April 1993, vol. 297, pp. 479-484;

148 R. Flückiger, J. Meier, H. Keppner, M. Götz, A, Shah,
"Preparation of Undoped and Doped Microcrystalline Silicon (µc-Si:H) by VHF-GD for p-i-n Solar Cells",
Proceedings of the 23th IEEE Photovoltaic Specialists Conference, Louisville, May 1993, pp. 839-844;

149 C. M. Fortmann, D. Fischer,
"Mobility, Recombination Kinetics and Solar Cell Performance",
Proceedings of the 23th IEEE Photovoltaic Specialists Conference, Louisville, May 1993, pp. 966-970;

150 D. Fischer, N. Wyrsch, C. M. Fortmann, A. Shah,
"Amorphous Silicon Solar Cells with Low-Level Doped i-Layers Characterised by Bifacial Measurements",
Proceedings of the 23th IEEE Photovoltaic Specialists Conference, Louisville, May 1993, pp. 878-884;

151 A. Mettler, N. Wyrsch, A. Shah
"Limits of the Constant Photocurrent Method (CPM) for the Determination of the Deep Defect Density in Amorphous Hydrogenated Silicon (a-Si:H)",
Proceedings of the 15th International Conference on Amorphous Semiconductors (ICAS), Cambridge, UK, September 1993, published in Journal of Non-Crystalline Solids, 1993, vol. 164-166, pp. 427-430;

152 P. Pipoz, N. Wälchli, H. Beck, A. Shah,
"Transient Photoconductivity Response with Optical Bias in a-Si:H",
Proceedings of the 15th International Conference on Amorphous Semiconductors (ICAS), Cambridge, UK, September 1993, published in Journal of Non-Crystalline Solids, 1993, vol. 164-166, pp. 525-528;

153 A. Shah, J. Hubin, P. Pipoz, E. Sauvain, N. Beck, N. Wyrsch,
"Role of Dangling Bond Charge in Determining µt-Products for a-Si:H",
Proceedings of the 15th International Conference on Amorphous Semiconductors (ICAS), Cambridge, UK, September 1993, published in Journal of Non-Crystalline Solids, 1993, vol. 164-166, pp. 485-488;

154 P. Hapke, F. Finger, R. Carius, H. Wagner, K. Prasad, R. Flückiger,
"Annealing Studies of the Microcrystalline Silicon System",
Proceedings of the 15th International Conference on Amorphous Semiconductors (ICAS), Cambridge, UK, September 1993, published in Journal of Non-Crystalline Solids, 1993, vol. 164-166, pp. 981-984;

155 U. Kroll , J. Meier , M. Goetz , A. Howling , J.-L. Dorier , J. Dutta , A. Shah, Ch. Hollenstein,
"Influence of Higher Deposition Temperature on a-Si:H Material Properties, Powder Formation and Light-Induced Degradation, using the VHF (70 MHz) Glow Discharge Technique",
Proceedings of the 15th International Conference on Amorphous Semiconductors (ICAS), Cambridge, UK, September 1993, published in Journal of Non-Crystalline Solids, 1993, vol. 164-166, pp. 59-62;

156 S.J. Jones, Y. Chen, D.L. Williamson, U. Kroll, P. Roca i Cabarrocas,
"The Effect of Ar and He Dilution of Silane Plasmas on the Microstructure of a-Si:H detected by Small-Angle X-Ray Scattering",
Proceedings of the 15th International Conference on Amorphous Semiconductors (ICAS), Cambridge, UK, September 1993, published in Journal of Non-Crystalline Solids, 1993, vol. 164-166, pp. 131-134;

157 P. Chabloz,
"Le Silicium Amorphe: Application comme Senseur Optoélectronique et de Rayon X",
AGEN Communications, Juni 1993, Nr. 56/57, pp. 49-54;

158 A. Mettler, N. Wyrsch, M. Götz, A. Shah,
"Deep Defect Determination by the Constant Photocurrent Method (CPM) in annealed or light soaked Amorphous Hydrogenated Silicon (a-Si:H)",
published in theTechnical Digest of the 7th International PVSEC, Nagoya Japan, November 1993, and in Solar Energy Materials and Solar Cells. , 1994, Vol. 34, pp. 533-539;

159 H. Keppner, P. Torres, R. Flückiger, J. Meier, A. Shah, C.M. Fortmann, P. Fath, G. Willeke, K. Happle, H. Kiess,
"Passivation Properties of Amorphous and Microcrystalline Silicon Layers Deposited by VHF-GD for Crystalline Silicon Solar Cells",
published in theTechnical Digest of the 7th International PVSEC, Nagoya Japan, November 1993, and in Solar Energy Materials and Solar Cells. , 1994, Vol. 34, pp. 201-209;

160 O. Greim, J. Weber, X.-M. Tang, Y. Baer, U. Kroll,
"Enhancement of Hydrogen Diffusion in a-Si:H through Intense Illumination";
Sol. State Comm. 1993, Vol. 88 (8), pp. 583-585;

161 H.von Känel, U. Kafader, P. Sutter, N. Onda, H. Sirringhaus, E. Müller, U. Kroll, C. Schwarz, S. Goncalves-Conto,
"Epitaxial Semiconducting and Metallic Iron Silicides"
Proceedings of the MRS Symp., Boston, December 1993, vol. 320, pp. 73-84;